The objective of the OxyGaN (‘Efficiency enhancement in GaN-based blue to blue-violet LDs by engineered nitride-oxide ohmic contacts’) project is to increase the efficiency of GaN blue to blue-violet laser diodes by introducing a novel contact scheme utilizing a bandgap-engineered transparent conducting oxide, ZnMgO:Al with contact interface engineering. Overcoming the standing issues related to contact formation to vertical GaN-based opto/electronic devices, contact structures will be developed, raising the device efficiency by forming stable ohmic contacts to both n- and p-type surfaces, acting as both the metallization and waveguide for p-GaN, fabricated using means taking into account a simplified process integration and resource management. The technology steps developed in the project will be finally integrated in a packaged laser diode demonstrator and the technology will be prepared for implementation on the production line of one of the partners, enabling resource-sustainable, more energy-efficient diodes for automotive, display, welding and patterning industries at lowered costs.
The project is realized by a multinational consortium of:
- Institute of Microelectronics and Photonics, Łukasiewicz Research Network (co-ordinator)
- Institute of High Pressure Physics, Polish Academy of Sciences
- Institute for Technical Physics and Materials Science, Centre for Energy Research
- Technion – Israel Institute of Technology
- TopGaN Lasers inc.
The project is jointly funded by the Polish National Centre For Research and Development (NCBR), Hungarian National Research, Development and Innovation Office (NKFIH) and Israel Ministry of Science and Technology (MOST) in the frames of the m-era.net framework (call 2019).
The OxyGaN project started on Sep. 01 2020 an will take place until Aug. 31 2023.