Archiwum autora:Michał Borysiewicz

The OxyGaN project finished on 31.08.2023. It was a great adventure concerning the technology of oxide ohmic contacts for GaN-based laser diodes. We started with the ambition to provide simplified processing of GaN LDs by developing a technology of single-type oxide electrode forming contacts to both sides of the LD, i.e. the top p-type Ga-face […]

The final year of the project saw good dissemination activity with the following presentations given: Oral presentation: P. Wiśniewski “Quantum gravimetry” –  VIIth IWC PAN Winter Workshop –  KALATÓWKI, Zakopane, Polska, 26-31 March 2023, Oral presentation: I. Levchenko “Mono or multilayer palladium contacts to p-GaN” –  VIIth IWC PAN Winter Workshop –  KALATÓWKI, Zakopane, Polska, 26-31 […]

2022 saw much more mobility and conference participation than 2021! The participants in project gave 13 presentations on the results of OxyGaN at international conferences and workshops. Particularly worth mentioning are Szymon Grzanka’s oral presentations at the International Workshop on Nitride Semiconductors in Berlin (below) and Aleksandra Wójcicka’s oral presentations at the Materials Research Society’s […]

The first publication of the project is out, telling the story of our very thorough studies of AZO deposition to get very low resistivity films at room temperatures – contrary to common knowledge and practice. The report came out in the journal Vacuum and is available online at: https://doi.org/10.1016/j.vacuum.2022.111299

The workshop that was organized by the Centre for Energy Research, Institute of Technical Physics and Materials Science in Budapest Hungary. There were over 15 participants in person and a similar number online. A very packed full day of presentations gave the participants overview of some of the most exciting developments in gallium nitride and […]

The programme of the OxyGaN workshop is now finalized! We have a selection of great experts representing the various aspects of wide band gap material-based electronics and photonics. We encourage to take part either in-person or online! The event will take place on 27th may 2022 at the Centre for Energy Research, Institute of Technical Physics […]

As part of the m-era.net co-financed OxyGaN project, the Centre for Energy Research of the Institute for Technical Physics and Materials Science in Budapest will organize a one-day workshop on the technology of wide band gap materials for laser diodes and related applications. The talks will include a selection of the experts from the project […]

2021 was a tough year in terms of conference participation with most of the meetings being postponed or cancelled altogether. The OxyGaN team also had to postpone the participation in the International Conference on Reactive Sputter Deposition 2021, but have successfully participated in several on-line or in person meetings including: Aleksandra Wójcicka, Ildikó Cora, János […]

The objective of the OxyGaN (‘Efficiency enhancement in GaN-based blue to blue-violet LDs by engineered nitride-oxide ohmic contacts’) project is to increase the efficiency of GaN blue to blue-violet laser diodes by introducing a novel contact scheme utilizing a bandgap-engineered transparent conducting oxide, ZnMgO:Al with contact interface engineering. Overcoming the standing issues related to contact […]