The programme of the OxyGaN workshop is now finalized! We have a selection of great experts representing the various aspects of wide band gap material-based electronics and photonics. We encourage to take part either in-person or online! The event will take place on 27th may 2022 at the Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest (Hungary), Konkoly Thege Miklós út 29-33. (Building 26). The presentations will be streamted online, to obtain the Zoom link, please contact Zsolt Fogarassy (fogarassy.zsolt at ek-cer.hu).
9:00 – 9:40 Béla Pécz (EK-MFA) – opening
9:40 – 10:15 Michał Borysiewicz (Łukasiewicz-IMIF) – Ohmic contact formation to wide band gap materials)
10:15 – 10:50 Tatyana Kravchuk (Technion) – Implementation of TOF-SIMS for investigation of microelectronic processes
10:50 – 11:05 coffee break
11:05 – 11:40 Piotr Perlin (Unipress) – Nitrides semiconductors for optoelectronic applications: chances and challenges
11:40 – 12:15 Szymon Grzanka (TopGaN) – Lasers for quantum applications
12:15 – 13:00 cold lunch
13:00 – 14:00 Laboratory visit
14:00 – 14:35 Zsolt Fogarassy (EK-MFA) (I. Cora, Zs. Fogarassy, R. Fornari, M. Bosi, A. Rečnik, B. Pécz) – In situ TEM study of κ → β and κ → γ phase transformations in Ga2O3
14:35 – 15:10 Matteo Bosi (IMEM) (M. Bosi, P. Mazzolini, F. Mezzadri, L. Seravalli, Z. Fogarassy, I. Cora, B. Pecz and R. Fornari) – Thermodynamic and kinetic effects on nucleation and growth of ε(κ) or β-Ga2O3 by MOVPE on different substrates (online)
15:10 – 15:20 coffee break
15:20 – 15:55 Andrzej Taube (Łukasiewicz-IMIF) (A. Taube, M. Borysiewicz, O. Sadowski, A. Wójcicka, J. Tarenko, K. Piskorski, M. Wzorek) – Vertical Schottky and heterojunction diodes on β-Ga2O3
15:55 – 16:30 Filippo Giannazzo (IMM) – Interface properties and electronic transport in 2D materials heterojunctions with GaN and SiC (online)